Plasma-Enhanced Chemical Vapor Deposition of Thin Films-Reference-Cited by-同舟云学术

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Plasma-Enhanced Chemical Vapor Deposition of Thin Films

Published:1982 Issue: Volume: Page:237-296
ISSN:0079-1970
Container-title:Physics of Thin Films - Advances in Research and Development
language:
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Author:

OJHA S.M.

Publisher

Elsevier

Reference269 articles.

1. “Polycrystalline and Amorphous Thin Film Devices,”;Carlson,1980

2. Properties of polycrystalline silicon prepared by chemical transport in hydrogen plasma at temperatures between 80 and 400 degrees C

3. “Introduction to Electrical Discharges in Gases.”;Brown,1966

4. “Plasma Chemistry in Electrical Discharges.”;McTaggard,1967

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Thin Films;Springer Handbook of Electronic and Photonic Materials;2017

3. Thin Films;Springer Handbook of Electronic and Photonic Materials;2006

4. Chemical Vapor Deposition Under Plasma Conditions;Film Deposition by Plasma Techniques;1992

5. Plasma-Enhanced Chemical Vapor Deposition;Thin Film Processes;1991

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