Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino)phosphine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Comparison of chemical beam epitaxy and metalorganic chemical vapour deposition for highly strained multiple quantum well InGaAsP/InP 1.5 μm lasers
2. Non-hydride group V sources for OMVPE
3. Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethane
4. Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxy
5. Investigations on indium phosphide grown by chemical beam epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemical Beam Epitaxial Growth of InP and GaP by Using Tertiarybutylbis (Dimethylamino) Phosphine;Journal of the Korean Physical Society;2007-12-15
2. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
3. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999
4. A comparison of the reactions of phosphorus precursors on deposited GaP and InP films;Journal of Crystal Growth;1997-11
5. Chapter 1 Materials Issues in High-Brightness Light-Emitting Diodes;Semiconductors and Semimetals;1997
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