MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. MBE grown strain-compensated AlGaInAs/AlGaInAs/InP MQW laser structures
2. High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition
3. Proc. 8th IPRM, Schwäbisch Gmünd;Thijs,1996
4. Insitunative oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth
5. In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication and molecular beam epitaxy regrowth of first-order, high contrast AlGaAs∕GaAs gratings;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006
2. Arsenic induced mass transport of GaAs on V-groove GaAs substrate;Journal of Crystal Growth;1999-05
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