MOVPE growth for an integrated PIN-HBT receiver using Zn-doped p+-InGaAs layers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. A 10 Gbit/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors
2. Proc. 5th Int. Conf. on InP and Related Materials;Reemtsma,1993
3. Workshop on High-Speed Bipolar Circuits and Devices;Goldhorn,1993
4. Monolithically integrated long wavelength optical receiver OEICs using InAlAs/InGaAs heterojunction MESFETs (HFETs)
5. 5 Gbit/s four-channel receiver optoelectronic integrated circuit array for long-wavelength lightwave systems
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
2. On the performance analysis and design of a novel shared-layer integrated device using RCE-p-i-n-PD/SHBT;Optoelectronic Materials and Devices II;2007-11-19
3. A comparison of TMG with TEG for the growth of InxGa1−xAs;Journal of Electronic Materials;2000-01
4. Devices;Organometallic Vapor-Phase Epitaxy;1999
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