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Growth of low-etch-pit density InSb single crystals by the Czochralski method

  • Published:1997-07 Issue:3 Volume:178 Page:422-425
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Godines J.A.,Castillo R.,Martínez J.,Navarro M.E.,De Anda F.,Canales A.,Gúzman J.,Rios-Jara D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal;Journal of Communications Technology and Electronics;2018-03

2. Development of InSb Semiconductor Detector for High Resolution Radiation Measurement;Journal of the Korean Physical Society;2011-06-15

3. Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2009-05

4. Electrochemical reduction synthesis of In–Sb nanoropes and terraced micropyramids;Electrochemistry Communications;2008-01

5. Electrochemical and Structural Characterizations of InSb Nanoparticles Prepared Using a Sodium Naphthalenide Reduction Method;Journal of The Electrochemical Society;2008
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