Passivation of misfit dislocations by atomic hydrogen irradiation in lattice-mismatched heteroepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Optoelectronic Devices and Material Technologies for Photo-Electronic Integrated Systems
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1. 2 Properties of Semiconductors;Heteroepitaxy of Semiconductors;2016-09-15
2. Optical property improvement of InAs/GaAs quantum dots grown by hydrogen-plasma-assisted molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05
3. Enhanced optical properties of InAs/GaAs quantum dots grown by radio-frequency hydrogen plasma-assisted molecular beam epitaxy;Semiconductor Science and Technology;2010-12-17
4. Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation;Japanese Journal of Applied Physics;1998-09-15
5. Atomic hydrogen cleaning of polar III–V semiconductor surfaces;Surface Science;1998-04
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