MOMBE growth of highly tensile-strained InGaAsP MQWs and their applications to 1.3-μm wavelength low threshold current lasers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Investigation of effect of strain on low-threshold 1.3 µm InGaAsP strained-layer quantum well lasers
2. Improved performance due to suppression of spontaneous emission in tensile-strain semiconductor lasers
3. Theoretical analysis of pure effects of strain and quantum confinement on differential gain in InGaAsP/lnP strained-layer quantum-well lasers
4. GaxIn/sub 1-x/AsyP/sub 1-y/-InP tensile-strained quantum wells for 1.3-μm low-threshold lasers
5. High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Influence of net strain, strain type, and temperature on the critical thickness of In(Ga)AsP-strained multi quantum wells;Journal of Applied Physics;1998-11
2. Potential of MOMBE/CBE for the production of photonic devices in comparison with MOVPE;Journal of Crystal Growth;1998-06
3. Differential gain and threshold current of 1.3 μm tensile-strained InGaAsP multi quantum well buried-heterostructure lasers grown by metalorganic molecular beam epitaxial growth;Applied Physics Letters;1998-03-30
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