Suppression of superlattice intermixing by p-type doping
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials
2. Impurity diffusion and layer interdiffusion in AlxGa1−xAs‐GaAs heterostructures
3. Al‐Ga interdiffusion in heavily carbon‐doped AlxGa1−xAs‐GaAs quantum well heterostructures
4. Effects of Be and Si on disordering of the AlAs/GaAs superlattice
5. Growth Temperature Dependence of Disorderings in a Be-Doped GaAs/AlAs Multilayered Structure
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1. Charged point defects in semiconductors;Materials Science and Engineering: R: Reports;2006-12
2. Impact of beryllium dopants on the stability of LT-grown AlAs/GaAs:Be heterostructures against thermally activated intermixing;Thin Solid Films;2003-08
3. Applications of isotope effects in solids;Journal of Materials Science;2003
4. Enhanced and retarded Ga self-diffusion in Si and Be doped GaAs isotope heterostructures;Solid State Communications;1999-10
5. Diffusion of Cd in GaAs and its correlation with self-diffusion on the Ga sublattice;Journal of Applied Physics;1999-07-15
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