Growth of heavily C-doped MQW structures by MOVPE for 2–3 μm normal incidence photodetectors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Normal incidence hole intersubband absorption long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors
2. Carbon‐doped long wavelength GaAs/AlxGa1−xAs quantum well infrared photodetectors grown by organometallic vapor phase epitaxy
3. Ultralow dark currentp‐type strained‐layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance forT≤100 K
4. p‐doped GaAs/Ga0.51In0.49P quantum well intersub‐band photodetectors
5. Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily dopedp‐type GaAs
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