Properties of InAs thin films grown on (100)-oriented GaAs substrate with various tilted angles and directions of misorientation-Reference-Cited by-同舟云学术

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Properties of InAs thin films grown on (100)-oriented GaAs substrate with various tilted angles and directions of misorientation

Published:1997-05 Issue: Volume:175-176 Page:191-196
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamamoto Masaki,Iwabuchi Tatsuro,Ito Takashi,Yoshida Takashi,Isoya Toshiro,Shibasaki Ichiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. The 8th Sensor Symp. C3-1;Shibasaki,1989

2. Epitaxial GaAs Hall Generators for High Temperature Applications

3. GaAs hall element fabricated by ion implantation

4. The 10th Sensor Symp. C2-2;Shibasaki,1991

5. Int. Conf. on Solid-State Sensor and Actuators (Transducers '91);Shibasaki,1991

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxial growth and characterization of InAs layers on GaAs (001) substrate;Optical and Quantum Electronics;2016-08-13

2. Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction;Journal of Crystal Growth;1998-08

3. Growth and transport properties of InAs thin films on GaAs;Journal of Crystal Growth;1998-07

4. Mass production of InAs Hall elements by MBE;Journal of Crystal Growth;1997-05

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