Breakdown of self-limiting behaviour in heterostructures grown by atomic layer epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Investigation of InAs submonolayer and monolayer structures on GaAs(100) and (311) substrates
2. Optical studies of the growth of single monolayer wide InAs quantum wells on GaAs by MBE
3. Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy
4. Structural and optical properties of (100) InAs single-monolayer quantum wells in bulklike GaAs grown by molecular-beam epitaxy
5. Optical characterization of submonolayer and monolayer InAs structures grown in a GaAs matrix on (100) and high‐index surfaces
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Precursors to Semiconducting Materials;Comprehensive Organometallic Chemistry III;2007
2. Superlattice Structures;Organometallic Vapor-Phase Epitaxy;1999
3. An X-ray standing wave study of ultrathin InAs films in GaAs(001) grown by atomic layer epitaxy;Journal of Crystal Growth;1998-12
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