Lateral composition modulation in strain compensated (GaInP)m(GaInAs)m short-period superlattices grown on (001) InP by atomic layer molecular beam epitaxy-Reference-Cited by-同舟云学术

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Lateral composition modulation in strain compensated (GaInP)m(GaInAs)m short-period superlattices grown on (001) InP by atomic layer molecular beam epitaxy

Published:2003-06 Issue:1-4 Volume:253 Page:167-173
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Golmayo D.,Dotor M.L.,Quintana C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. Compositional modulation and long‐range ordering in GaP/InP short‐period superlattices grown by gas source molecular beam epitaxy

2. Growth of GaInAsP quantum wire heterostructures using the strain-induced lateral-layer ordering process

3. Formation of lateral quantum wells in vertical short‐period superlattices by strain‐induced lateral‐layer ordering process

4. Lateral composition modulation in AlAs/InAs short period superlattices grown on InP(001)

5. (Ga0.22In0.78As)m⧸(Ga0.22In0.78P)m superlattices grown by atomic-layer molecular beam epitaxy on InP

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mechanical Preparation Techniques;Sample Preparation Handbook for Transmission Electron Microscopy;2010

2. Analysis of local deformations in heterostructures containing short period superlattices by high-resolution transmission electron microscopy;The European Physical Journal Applied Physics;2004-02-17

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