β-NMR on implanted boron and nitrogen in ZnSe-Reference-Cited by-同舟云学术

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β-NMR on implanted boron and nitrogen in ZnSe

Published:1998-02 Issue: Volume:184-185 Page:485-489
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ittermann B.,Marbach K.,Welker G.,Diehl E.,Füllgrabe M.,Heemeier M.,Kroll F.,Mai F.,Meier P.,Peters D.,Thieß H.,Ackermann H.,Stöckmann H.-J.,Zeitz W.-D.,Wenisch H.,Hommel D.,Landwehr G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. Hyperfine Interactions of Radioactive Nuclei;Ackermann,1983

2. ?-radiation detected nuclear magnetic resonance studies of point defects in semiconductors

3. Boron- and Fluorine-Ion-Implantation into ZnSe Single Crystals

4. 35 Years of Defects in Semiconductors: What Next?

5. The Dipolar Broadening of Magnetic Resonance Lines in Crystals

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect properties of implanted boron in ZnSe;Physical Review B;1999-01-15

2. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01

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