Temperature-dependent measurements on ZnSe heterostructures by high-resolution X-ray diffraction
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Thermoelastic Strain in ZnSe Films Grown on GaAs by Metalorganic Vapor Phase Epitaxy
2. Raman Study of Misfit Strain and Its Relaxation in ZnSe Layers Grown on GaAs Substrates
3. Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer Thickness and Growth Temperature
4. Absolute Lattice-Parameter Measurement
5. Thermal Expansion of Silicon and Zinc Oxide (I)
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1. 2 Properties of Semiconductors;Heteroepitaxy of Semiconductors;2016-09-15
2. Nondestructive evaluation of misfit dislocation densities in ZnSe∕GaAs heterostructures by x-ray diffuse scattering;Journal of Applied Physics;2005-05-15
3. A triple axis mode X-ray diffraction measurement on elastic strain distribution of lightly Cr-doped SI-GaAs for laser windows;Materials Research Bulletin;2003-03
4. Thermal expansion of bulk and homoepitaxial GaN;Applied Physics Letters;2000-09-04
5. Thermally Induced Strain in ZnSe and GaN Epitaxial Layers Studied by High-Resolution X-Ray Diffraction at Variable Temperatures;physica status solidi (a);2000-07
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