Effect of interface energy on erosion of AIIIBV substrates during liquid phase heteroepitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions
2. A model of internal lattice deformation of the interface during liquid phase heteroepitaxy of AxB1–xCyD1–y-type AIIIBV compounds
3. Contact etching of GaP substrates by GaInPAs saturated solution during liquid phase heteroepitaxy
4. Effect of stabilisation of lattice constant in the GaInPAs system
5. A gaAs surface after its contact with an undersaturated AlGaAs liquid. Observation after anodic oxidation
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1. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
2. Application of the polyassociative solutions model to determine phase equilibrium in multicomponent A2B6 semiconductor systems and ternery magnetic oxide systems;Journal of Crystal Growth;2013-01
3. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
4. Study of generation of GaxIn1−xPyAs1−y transition layers obtained by liquid phase epitaxy;Journal of Crystal Growth;1996-01
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