GaAs single crystal for 3 inch diameter wafers grown by horizontal zone melt technique-Reference-Cited by-同舟云学术

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GaAs single crystal for 3 inch diameter wafers grown by horizontal zone melt technique

Published:1990-01 Issue:1-4 Volume:99 Page:676-679
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Mizuniwa S.,Kashiwa M.,Kurihara T.,Nakamura K.,Okubo S.,Ikegami K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Heat pipe assisted zone melter for GaAs

2. Liquid encapsulated vertical zone melt (VZM) growth of GaAs crystals

3. Evaluation of the Mellen “EDG” furnace for growth of large diameter GaAs single crystals in a horizontal configuration

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bulk Crystal Growth;Handbook of Compound Semiconductors;1995

2. Heat transfer—a review of 1990 literature;International Journal of Heat and Mass Transfer;1991-12

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