Verification of singular plane formation in CdTe homoepitaxy-Reference-Cited by-同舟云学术

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Verification of singular plane formation in CdTe homoepitaxy

Published:2000-07 Issue:1-2 Volume:217 Page:102-108
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yoshioka Yasushi,Shimizu Kazuhiro,Takagaki Katsuhiko,Kasuga Masanobu

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference3 articles.

1. R. Kimata, M. Kasuga, T. Tsukumo, R.H. Bube and R.S. Feigelson, Technical Digest Int. PVSEC-1, Kobe, 1984, p. 385.

2. Homo-epitaxial growth of CdTe by sublimation under low pressure

3. M. Kasuga, L. Li, Y. Yoshioka, Twinning in Advanced Materials, TMS, Warrendale, 1994, p. 115.

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dependence of surface morphology at initial growth of CdTe on the II/VI on (2 1 1) Si substrates by vapor phase epitaxy using metallic Cd source;Journal of Crystal Growth;2019-01

2. Vapor Phase Epitaxy of (133) and (211) CdTe on (211) Si Substrates Using Metallic Cd Source;Journal of Electronic Materials;2018-10-16

3. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013

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