Study of site change of Li impurities in ZnSe by co-doping with iodine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Mechanism of Fermi-level stabilization in semiconductors
2. Materials Design of the Codoping for the Fabrication of Low-Resistivity p-Type ZnSe and GaN by ab-initio Electronic Structure Calculation
3. Role of Cl or I Codoping in Li-Doping Enhancement in ZnSe
4. Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation
5. Theory of the self-compensation in p-type ZnSe
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2. Electric Characteristics of Li2O-Doped TiO2Nanocrystalline Film and Its Application to Dye-Sensitized Solar Cells;Japanese Journal of Applied Physics;2009-02-20
3. Doping Aspects of Zn-Based Wide-Band-Gap Semiconductors;Springer Handbook of Electronic and Photonic Materials;2006
4. II–VI quantum dots grown by MOVPE;Journal of Crystal Growth;2003-02
5. Self-ordered CdSe quantum dots in ZnSe and (Zn, Mn)Se Matrices Assessed by transmission electron microscopy and photoluminescence spectroscopy;Journal of Electronic Materials;2001-06
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