Generation of misfit dislocations due to thermally induced strain – a study by temperature-dependent HRXRD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Variation of Misfit Strain in ZnSe Heteroepitaxial Layers with Temperature, Layer Thickness and Growth Temperature
2. Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)
3. Temperature-dependent measurements on ZnSe heterostructures by high-resolution X-ray diffraction
4. X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures
5. ZnSe-Based Laser Diodes and LEDs Grown on ZnSe and GaAs Substrates
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural characterization of InxGa1−xAs/Inp layers under different stresses;Applied Surface Science;2006-10
2. Nondestructive evaluation of misfit dislocation densities in ZnSe∕GaAs heterostructures by x-ray diffuse scattering;Journal of Applied Physics;2005-05-15
3. Pressure-induced defect structure changes in thin AlGaAs layers;Journal of Alloys and Compounds;2004-01
4. Burgers vector analysis of large area misfit dislocation arrays from bend contour contrast in transmission electron microscope images;Journal of Physics: Condensed Matter;2002-11-22
5. Studies of Misfit Dislocation Densities in II-VI Laser Structures by Diffuse X-Ray Scattering;physica status solidi (b);2002-01
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