Growth and characterization of cubic-CdS layers on (100) GaAs in metalorganic vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method
2. Structure of hexagonal and cubic CdS heteroepitaxial layers on GaAs studied by transmission electron microscopy
3. Epitaxial growth of hexagonal and cubic CdS on and 2° off-oriented ()GaAs and CuInSe2, and misalignment between []CdS and []GaAs axes
4. The role of impurities in refined ZnSe and other II–VI semiconductors
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1. Influence of III–V substrates on the texture, structural, and optical properties of CdS thin films deposited by chemical bath deposition;Journal of Materials Science: Materials in Electronics;2020-01-27
2. Temperature dependences of the intensity and the position from photocurrent and photoluminescence spectra in CdS layers;Journal of the Korean Physical Society;2012-06
3. Investigation of crystal structure and new ellipsometric properties of hexagonal CdS epilayers;Applied Surface Science;2011-10
4. The structure of CdS nanoparticles;Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques;2010-08
5. Investigation of energy band gap and optical properties of cubic CdS epilayers;Applied Surface Science;2008-09
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