Lateral OMVPE growth of GaAs on patterned substrates
Author:
Funder
National Science Foundation
Division of Materials Research
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. One-Step Grown Lateral p-n Junctions on GaAs (001) Patterned Substrates with (110) Sidewalls by Molecular Beam Epitaxy
2. Selective growth of InP by MOCVD around dry-etched mesas having various patterns for photonic integrated circuits
3. Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrates: role of atomic hydrogen in natural self-faceting
4. Self-assembled InAs dots and quantum wires fabricated on patterned (311)A GaAs substrates by molecular beam epitaxy
5. Selective growth of GaAs in the MOMBE and MOCVD systems
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1. From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE;Crystal Growth & Design;2023-06-12
2. Fundamental Aspects of MOVPE;Metalorganic Vapor Phase Epitaxy (MOVPE);2019-08-30
3. Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates;Journal of Crystal Growth;2017-04
4. Growth and study of nonlinear optical materials for frequency conversion devices with applications in defence and security;SPIE Proceedings;2014-10-31
5. Te surfactant effects on the morphology of patterned (001) GaAs homoepitaxy;Journal of Crystal Growth;2004-09
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