In situ reflectance monitoring of overgrowth of InGaAs gratings in laser diode manufacture-Reference-Cited by-同舟云学术

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In situ reflectance monitoring of overgrowth of InGaAs gratings in laser diode manufacture

Published:2000-12 Issue:1-4 Volume:221 Page:156-159
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ebert C.W.,Joyner C.H.,Rao G.K.,Venables R.D.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings

2. Effects of heat-up procedure and grating depth on the erosion of InGaAs grating

3. A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films usinginsitunormal incidence reflectance

4. K.P Keileen, W.G. Breiland , ICMOVPEVIII, 1996.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Metal Organic Chemical Vapor Deposition;Handbook of Thin Film Deposition Processes and Techniques;2001

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