Observation and origin of the photoluminescence spectrum showing multi-band structure from strained layer superlattice of ZnS–ZnTe
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Properties of ZnTe-ZnSe and -ZnS superlattices prepared by hot wall epitaxy
2. ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy
3. Doping superlattices ("n-i-p-i crystals")
4. Time-resolved luminescence spectroscopy of recombination dynamics in a ZnSSe doping superlattice
5. Wide bandgap II–VI compound semiconductor superlattices grown by metalorganic molecular beam epitaxy
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1. Submonolayer type-II ZnS/ZnTe multiple quantum well;Solid State Communications;2006-12
2. Growth and optical characterization of single quantum well structure of submonolayer ZnS/ZnTe;Solid State Communications;2006-01
3. Optical evidences of quantum dots formed in ZnTe matrix;Journal of Crystal Growth;2005-03
4. Type-II interband transition of ZnS0.78Te0.22/ZnTe single quantum wells;Applied Physics Letters;2004-05-10
5. Telluride/selenide and telluride/sulphide superlattices;Landolt-Börnstein - Group III Condensed Matter
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