Atomic layer epitaxy growth of ZnS Se1− epitaxial layers lattice-matched to Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
2. Carrier transport properties of iodine‐doped (ZnS)3(ZnSe)42ordered alloys grown by atomic layer epitaxy
3. Molecular beam epitaxial growth of ZnS on a (100)-oriented Si substrate
4. Growth of crystalline zinc sulfide films on a (111)‐oriented silicon by molecular‐beam epitaxy
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1. Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication;Advanced Materials Interfaces;2021-05-06
2. Growth and characterization of ZnS Se thin films deposited by spray pyrolysis;Thin Solid Films;2018-10
3. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
4. The physical properties of SnS films grown on lattice-matched and amorphous substrates;physica status solidi (a);2010-06-07
5. Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2010-05
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