Phase diagram calculation for epitaxial growth of GaInAs on InP considering the surface, interfacial and strain energies
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference34 articles.
1. The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
2. Composition latching phenomenon and lattice mismatch effects in LPE-grown In1−xGaxAs on InP substrate
3. Liquid phase epitaxy of unstable alloys: Substrate-induced stabilization and connected effects
4. A mechanism for liquid‐phase epitaxial growth of nonequilibrium compositions producing a coherent interface
5. The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap
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