Gravity effect on dissolution and growth of GaSb by liquid-phase epitaxy-Reference-Cited by-同舟云学术

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Gravity effect on dissolution and growth of GaSb by liquid-phase epitaxy

Published:1997-04 Issue:1-4 Volume:174 Page:226-229
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kanai H.,Kimura M.,Dost S.,Tanaka A.,Sukegawa T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Gravity effect on dissolution and growth of silicon in the In-Si system

2. LPE growth of silicon by yo-yo solute feeding method

3. Gravity effect on liquid phase epitaxy of Si

4. Convection phenomenon during the dissolution of silicon in an indium solution

5. Dissolution process of silicon in an indium solution

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. References;Single Crystal Growth of Semiconductors from Metallic Solutions;2007

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