The effect of sample preparation on spreading resistance measurements of doped semiconductors-Reference-Cited by-同舟云学术

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The effect of sample preparation on spreading resistance measurements of doped semiconductors

Published:1997-04 Issue:1-4 Volume:174 Page:202-207
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Trujillo A.H.,Matthiesen D.H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Emerging Semiconductor Technology;Banke,1986

2. Combined application of spreading-resistance and electron-microprobe depth profiling on GaAs:Zn and Si:P

3. Emerging Semiconductor Technology;Pawlik,1986

4. ACS Symp. Ser. 295, Microelectronics Processing: Inorganic Materials Characterization;Schroder,1986

5. ACS Symp. Ser. 295, Microelectronics Processing: Inorganic Materials Characterization;Shushan,1986

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of etching on Ge(111) surfaces and Pd Schottky contacts;physica status solidi (c);2008-02

2. Surface Modification by Scratching Test for Laser Cleaning WC-Co in Liquid Polymer;Journal of the Ceramic Society of Japan;2006

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