Cellular structure in LEC ternary Ga1 − xInxAs crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Semi-insulating III–V Materials, Toronto 1990;Bonner,1990
2. Substrate-quality ternary III-V single crystals for II-VI device applications: growth and characterization
3. Growth cells of heavily In-doped LEC GaAs crystals
4. Cellular growth and In-concentrated inclusions in LEC In-doped GaAs crystals
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Bulk Crystal Growth of Ternary III–V Semiconductors;Springer Handbook of Crystal Growth;2010
2. Crystal‐Growth Technology for Ternary III‐V Semiconductor Production by Vertical Bridgman and Vertical Gradient Freezing Methods with Accelerated Crucible Rotation Technique;Crystal Growth Technology;2008-01-16
3. Growth of InGaAs and SiGe homogeneous bulk crystals which have complete miscibility in the phase diagrams;International Journal of Materials and Product Technology;2005
4. Industrial challenges for numerical simulation of crystal growth;Open Physics;2004-01-01
5. Suppression of cracks in InxGa1−xSb crystals through forced convection in the melt;Journal of Crystal Growth;1998-11
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