Chemical beam epitaxy growth of tensile-strained quantum well heterostructures for laser application
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Metal-organic vapour phase epitaxy: A thin film technology for large-scale production of high power GaAs/GaAlAs laser diodes
2. Uniform and high-power characteristics of 780-nm AlGaAs TQW laser diodes fabricated by large-scale MOCVD
3. High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy
4. Strained layer GaAs1−yPy‐AlGaAs and InxGa1−xAs‐AlGaAs quantum well diode lasers
5. High-performance 770-nm AlGaAs-GaAsP tensile-strained quantum-well laser diodes
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Magnetic Field Induced Exciton Binding Energy in a Strained GaAs1-xPx/GaAs0.6P0.4 Quantum Dot;CHINESE J PHYS;2014
2. Photoluminescence Properties of Tensile-Strained GaAsP/GaInP Single Quantum Wells Grown By Metal Organic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2008-09-12
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