Structural property and interband transition studies on CdxZn1−xTe/ZnTe coupled step and rectangular quantum wells-Reference-Cited by-同舟云学术

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Structural property and interband transition studies on CdxZn1−xTe/ZnTe coupled step and rectangular quantum wells

Published:1999-03 Issue:4 Volume:197 Page:799-804
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kim T.W.,Kim J.H.,Park H.L.,Lee J.Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Growth and Optical Properties of Wide Gap II–VI Low Dimensional Semiconductors;McGill,1989

2. 3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy

3. Photoluminescence in ZnSe‐based quantum well wire structures

4. Femtosecond Coherent Spectroscopy of Bulk ZnSe and ZnCdSe/ZnSe Quantum Wells

5. Structural study of defects induced during current injection to II–VI blue light emitter

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial Growth of 3C-SiC on Si(111) Using Hexamethyldisilane and Tetraethylsilane;Japanese Journal of Applied Physics;2004-11-10

2. An Approximately Analytical Solution for the Marangoni Convection in an In–Ga–Sb System;Chinese Physics Letters;2004-10

3. Formation mechanism of interfacial voids in the growth of SiC films on Si substrates;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2001-09

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