C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Properties of high‐purity AlxGa1−xAs grown by the metalorganic vapor‐phase‐epitaxy technique using methyl precursors
2. Quantitative oxygen measurements in OMVPE Al x Ga1−x As grown by methyl precursors
3. Characterization of Oxygen and Carbon in Undoped AlGaAs Grown by Organometallic Vapor-Phase Epitaxy
4. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films
5. Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and Tertiarybutylarsine
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1. Influence of Highly Efficient Carbon Doping on AlxGa1−xAs Layers with Different Al Compositions (x) Grown by MOVPE;Journal of Electronic Materials;2023-06-27
2. Surface defect effects in AlGaAs-on-Insulator photonic waveguides;Optics Express;2023-06-01
3. Growth of wurtzite AlxGa1−xP nanowire shells and characterization by Raman spectroscopy;Nanotechnology;2016-12-14
4. OMVPE of InAlAs Using Alternative Al and As Precursors;MRS Proceedings;2014
5. MOVPE Processes;Design and Realization of Novel GaAs Based Laser Concepts;2012
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