Dependence of energy levels and optical transitions on layer thicknesses in InSe/GaSe superlattices-Reference-Cited by-同舟云学术

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Dependence of energy levels and optical transitions on layer thicknesses in InSe/GaSe superlattices

Published:1998-12 Issue:3-4 Volume:194 Page:331-335
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Erkoç Şakir,Katırcıoğlu Şenay

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Optics of Semiconductor Nanostructures,1993

2. Semiconductor Superlattices: Growth and Electronic Properties,1995

3. Wave Mechanics Applied to Semiconductor Heterostructures;Bastard,1988

4. Quantum Semiconductor Structures: Fundamentals and Applications;Weisbuch,1991

5. H.G. Grimmeiss (Ed.), Heterostructures of Semiconductors, Physica Scripta, vol. T68, 1996.

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Yb/MoO3/In2Se3/Ag Sensors Designed as Tunneling Diodes, MOSFETs, Microwave Resonators, Laser Sensors, and VLC Receivers Suitable for 4G/5G and VLC Technologies;IEEE Transactions on Electron Devices;2021-12

2. Structural and electronic properties of InmSen microclusters: density functional theory calculations;Journal of Molecular Structure: THEOCHEM;2001-06-15

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