Optical and electrical properties of InAlAs/AlAsSb type II quantum well structures grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification
2. Electric‐field induced excitons in an AlInAs/InP type‐II superlattice
3. Optical bistability of In0.52Al0.48As/InP type II multi-quantum well diodes
4. InAlAs/AlAsSb Type II Multiple Quantum Well Layers Lattice-Matched to InP Grown by Molecular Beam Epitaxy
5. Type I/Type II Transition in InGaAlAs/InP Multiple Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy;Journal of Applied Physics;2015-06-07
2. Band offsets of Al[sub x]Ga[sub 1−x]SbAs/InGaAs heterojunctions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002
3. Electrical properties of molecular beam epitaxially grown Al[sub x]Ga[sub 1−x]Sb[sub y]As[sub 1−y] and its application in InP-based high electron mobility transistors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001
4. Effect of growth interruptions on the interfaces of InGaAs/AlAsSb superlattice;Applied Physics Letters;1999-10-18
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