InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
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1. Regrowth of diluted magnetic semiconductor GaMnAs on InGaP (001) surfaces to realize freestanding micromechanical structures;Journal of Applied Physics;2007-03-15
2. Crystallographic dependence of the lateral undercut wet etching rate of InGaP in HCl;Applied Physics Letters;2003-01-27
3. A simple method producing shadow masks used in electrical characterization techniques;Instruments and Experimental Techniques;2003
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