Photoluminescence and photoluminescence-excitation spectroscopy of GaPAsN/GaP lattice-matched multiple quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP
2. Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of MetastableGaP1-xNxAlloys: A Growth Interruption Study
3. N incorporation in GaP and band gap bowing of GaNxP1−x
4. MOVPE Growth of GaPAsN Quaternary Alloys Lattice-Matched to GaP
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1. Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, and localization of states;Journal of Applied Physics;2019-11-07
2. Stability of the intermediate band energy position upon temperature changes in GaNP and GaNPAs;Solar Energy Materials and Solar Cells;2019-07
3. Nitrogen-related intermediate band in P-rich GaNxPyAs1−x−y alloys;Scientific Reports;2017-11-16
4. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires;Semiconductors;2016-11
5. Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation;Semiconductors;2014-03
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