Metal organic vapour phase epitaxial growth and characterization of (GaIn)P layers grown with different P-containing precursors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
2. High‐brightness InGaAlP green light‐emitting diodes
3. 29.5%‐efficient GaInP/GaAs tandem solar cells
4. Darstellung und Eigenschaften einiger Phosphorverbindungen mit tert.‐Butylgruppen
5. Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In-depth analysis of the interfaces in InGaP/GaAs heterosystems;The European Physical Journal Applied Physics;2004-07
2. Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE;Journal of Crystal Growth;2001-11
3. Systematic study of the surface morphology of ordered (GaIn)P;Applied Surface Science;2000-09
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