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Studies of p-GaN grown by MBE on GaAs(111)B

  • Published:1998-06 Issue: Volume:189-190 Page:516-518
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Foxon C.T.,Cheng T.S.,Jeffs N.J.,Dewsnip J.,Flannery L.,Orton J.W.,Harrison I.,Novikov S.V.,Ber B.Ya.,Kudriavtsev Yu.A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of effects of interface-state charges on the electrical characteristics in GaAs/GaN heterojunctions;Japanese Journal of Applied Physics;2017-12-28

2. Investigation of the GaN-on-GaAs interface for vertical power device applications;Journal of Applied Physics;2014-07-07

3. InGaN Technology for IBSC Applications;Springer Series in Optical Sciences;2012

4. GaN Nanowires Grown by Molecular Beam Epitaxy;IEEE Journal of Selected Topics in Quantum Electronics;2011-07

5. Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy;Solid State Communications;1999-02
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