Doping of InSb and InAs using CBr4 during growth by gas source molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Low Temperature p- and n- Type Doping of InSb Grown on GaAs Using Molecular Beam Epitaxy.
2. Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD
3. High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector
4. High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
5. Growth of high-quality p-type GaAs epitaxial layers using carbon tetrabromide by gas source molecular-beam epitaxy and molecular-beam epitaxy
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1. Performance improvement of 1.3 μm InAlGaAs MQW modulators grown by MOVPE using C-doped InAl(Ga)As cladding layers;Journal of Crystal Growth;2024-10
2. Electrical conduction of C-implanted InAs single crystal;Materials Research Express;2019-02-22
3. Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template;Thin Solid Films;2018-01
4. Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy;Journal of Materials Science;2017-10-31
5. Fermi energy dependence of the optical emission in core/shell InAs nanowire homostructures;Nanotechnology;2017-06-28
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