In situ characterisation of MOVPE by surface photoabsorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Origin of surface reflectance spectrum during epitaxy
2. Real-time optical monitoring of GaxIn1 − xP and GaP heteroepitaxy on Si under pulsed chemical beam conditions
3. Reflectance anisotropy studies of the growth of InP on InP(001) at atmospheric pressures using tertiarybutylphosphine and trimethylindium
4. Real-time analysis of III–V-semiconductor epitaxial growth
5. In-situ monitoring of GaAs growth process in MOVPE by surface photo-absorption method
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