The measurement of work function on GaAs (001) surface during MBE growth by scanning electron microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. μm-Scale Lateral Growth of Ga-Monolayers Observed In-Situ by Electron Microscopy
2. MBE monolayer growth control by in-situ electron microscopy
3. Dramatic work function variations of molecular-beam epitaxially grown GaAs(100) surfaces
4. A Theory of Secondary Electron Emission from Metals
5. Solid State Physics;Dekker,1956
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Energetics of growth on thec(4×4)reconstructed GaAs(001) surface and antisite formation: Anab initioapproach;Physical Review B;2004-05-04
2. Surface morphology and ionization potentials of polar semiconductors: The case of GaAs;Physical Review B;2004-01
3. Work function of GaAs (001) surface obtained by the electron counting model;Journal of Crystal Growth;2001-07
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