Characterization of metastable hydrogen-related defects in n-GaAs by isothermal constant-capacitance–voltage transient spectroscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Electrical and optical characterization of metastable deep-level defects in GaAs
2. Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation
3. Hydrogen-related metastable defects in passivatedn-type GaAs grown by metal-organic vapor-phase epitaxy
4. Metastable Defects in N-Type GaAs Related to Hydrogen
5. Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Field dependence of the E1′ and M3′ electron traps in inductively coupled Ar plasma treated n-Gallium Arsenide;Journal of Applied Physics;2012-05
2. Investigation of the annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs utilizing the piezoelectric photothermal technique;Review of Scientific Instruments;2003-01
3. Annealing effect on the nonradiative carrier recombination in AlGaAs/GaAs investigated by a piezoelectric photothermal spectroscopy;MRS Proceedings;2001
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