Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. History and Future of Semiconductor Wafer Bonding
2. Structural and electrical investigations of silicon wafer bonding interfaces
3. Detection and Characterisation of 'Sleeping' Defects in Silicon by LBIC Scan Maps at 80 K.
4. Gettering of copper by bulk stacking faults and punched‐out dislocations in Czochralski‐grown silicon
5. Semiconductor Silicon/1994;Sekiguchi,1994
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical activity of grain boundaries in polycrystalline silicon - influences of grain boundary structure, chemistry and temperature;INT J MATER RES;2022
2. Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method;Japanese Journal of Applied Physics;2015-07-15
3. Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks;Solid State Phenomena;2009-10
4. Correlation of electrical and luminescence properties of a dislocation network with its microscopic structure;physica status solidi (c);2009-08
5. Quantitative analysis of subgrain boundaries in Si multicrystals and their impact on electrical properties and solar cell performance;Journal of Applied Physics;2009-02-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3