Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Semiconductor molecular‐beam epitaxy at low temperatures
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3. High‐density optical storage based on nanometer‐size arsenic clusters in low‐temperature‐growth GaAs
4. Ultrafast 1.55 μm all‐optical switching using low‐temperature‐grown multiple quantum wells
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2. Numerical investigation of the plasma-aided fabrication of stoichiometric InAs nanodots at early stage of the growth;Journal of Applied Physics;2013-07-14
3. Photoluminescence from low temperature grown InAs∕GaAs quantum dots;Applied Physics Letters;2007-03-12
4. Time-resolved reflectivity of low-temperature grown InAs/GaAs quantum dots;SPIE Proceedings;2006-04-21
5. Dichroic reflection of InAs∕GaAs quantum dots;Journal of Applied Physics;2005-10
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