Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation-Reference-Cited by-同舟云学术

Improvement of crystalline quality of GaAsyP1−x−yNx layers with high nitrogen compositions at low-temperature growth by atomic hydrogen irradiation

Published:2003-04 Issue:1-4 Volume:251 Page:443-448
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Momose Kenji,Yonezu Hiroo,Furukawa Yuzo,Utsumi Atsushi,Yoshizumi Yusuke,Shinohara Sei

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

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2. Gas-Source Molecular Beam Epitaxy of $\bf GaN_{\ninmbi x}As_{1-{\ninmbi x}}$ Using a N Radical as the N Source

3. Tensile strain relaxation in GaNxP1−x (x≤0.1) grown by chemical beam epitaxy

4. K. Samonji, H. Yonezu, K. Ojima, Y. Fujimoto, N. Ohshima, Proceedings of the Second International Symposium on Blue Laser and Light Emitting Diodes, Chiba, 1998, p. 314.

5. Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

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