Structural and optical properties of organometallic vapor phase epitaxial grown CdSe epilayers on (001) InP and (001) GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference20 articles.
1. Exciton spectroscopy inZn1−xCdxSe/ZnSe quantum wells
2. Epitaxial growth of highly strained InxGa1−xAs on GaAs(001): the role of surface diffusion length
3. Strained layer GaAs1−yPy‐AlGaAs and InxGa1−xAs‐AlGaAs quantum well diode lasers
4. High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
5. Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. VI/II ratio-dependent growth and photoluminescence of cubic CdSe epilayers by molecular beam epitaxy;Journal of Crystal Growth;2011-08
2. A Facile, Green Route - Electron Beam Irradiation to Nanocrystalline Cadmium Selenide at Room Temperature;Advanced Materials Research;2011-07
3. Layer structure of Zn1−x CdxSe films grown by vapor-phase epitaxy from metal-organic compounds on Cd0.92Zn0.08S(0001) substrates;Semiconductors;2003-03
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