III-N ternary epi-layers grown on the GaN bulk crystals-Reference-Cited by-同舟云学术

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III-N ternary epi-layers grown on the GaN bulk crystals

Published:2001-10 Issue:3 Volume:231 Page:352-356
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Leszczynski M.,Prystawko P.,Czernecki R.,Lehnert J.,Suski T.,Perlin P.,Wisniewski P.,Grzegory I.,Nowak G.,Porowski S.,Albrecht M.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. The Blue Laser Diode;Nakamura,1997

2. Critical temperature of 1.3 μm InP-based strained-layer multiple-quantum-well lasers

3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

4. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitride and Other III-V Compounds;Compound Semiconductor Bulk Materials and Characterizations;2012-12

2. Potential of MBE for gallium nitride based lasers;SPIE Proceedings;2005-09-16

3. Surface and electronic structure of Ga0.92In0.08N thin film investigated by photoelectron spectroscopy;Thin Solid Films;2005-04

4. Blue-Laser Structures Grown on Bulk GaN Crystals;physica status solidi (a);2002-08

5. The Application of High Pressure in Physics and Technology of III-V Nitrides;Acta Physica Polonica A;2001-12

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