Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. Atomic layer epitaxy of CdTe on the polar (111)A and (111)B surfaces of CdTe substrates
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3. GaAs Atomic Layer Epitaxy by Hydride VPE
4. Self‐limiting mechanism in the atomic layer epitaxy of GaAs
5. Growth of GaAs by switched laser metalorganic vapor phase epitaxy
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1. Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends;Journal of Applied Physics;2013-01-14
2. Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process;Journal of Applied Physics;2005-06-15
3. Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method;Journal of Crystal Growth;2005-02
4. Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum;Journal of Crystal Growth;2003-11
5. Growth rate reduction in self-limiting growth of doped GaAs by molecular layer epitaxy;Materials Science in Semiconductor Processing;2003-10
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