AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD-Reference-Cited by-同舟云学术

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AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

Published:2001-07 Issue:1-4 Volume:229 Page:63-68
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shibata Tomohiko,Asai Keiichiro,Nakamura Yukinori,Tanaka Mitsuhiro,Kaigawa Kazuyuki,Shibata Junko,Sakai Hiroaki

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

2. Growth morphology and surface‐acoustic‐wave measurements of AIN films on sapphire

3. R.S. Kagiwada, K.H. Yen, K.F. Lau, 1978 Ultrasonics Symposium Proceedings, IEEE, New York, 1978, p. 598.

4. High-Frequency and Low-Dispersion Characteristics of Surface Acoustic Waves on AlN/Al2O3

5. Zero Temperature Coefficient Surface-Acoustic-Wave Delay Lines on AlN/Al2O3

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1. Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing;Journal of Applied Physics;2024-05-15

2. Non-polar a-plane AlN epitaxial films on r-plane sapphire with greatly reduced defect densities obtained by high-temperature annealing;Journal of Crystal Growth;2022-11

3. The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate;Symmetry;2022-03-14

4. Non-Polar A-Plane Aln Epitaxial Films on R-Plane Sapphire with Greatly Reduced Defect Densities Obtained by High-Temperature Annealing;SSRN Electronic Journal;2022

5. MOVPE growth and high-temperature annealing of (101¯0) AlN layers on (101¯0) sapphire;Journal of Crystal Growth;2018-11

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