Czochralski growth of bismuth germanium silicon oxide (BGSO) single crystal and its characterization-Reference-Cited by-同舟云学术

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Czochralski growth of bismuth germanium silicon oxide (BGSO) single crystal and its characterization

Published:2002-02 Issue:1-4 Volume:235 Page:212-216
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Vaithianathan V.,Kumaragurubaran S.,Senguttuvan N.,Santhanaraghavan P.,Ishii M.,Sinha P.K.,Ramasamy P.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. Thermal analysis of bismuth germanate compounds

2. Stable and metastable phase equilibrium in system Bi2O3GeO2

3. Single crystals for radiation detectors

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of temperature gradient on microstructure and properties of GaSb crystals grown with Bridgman method;Materials Research Express;2020-05-01

2. Engineering of mixed Bi4(GexSi1-x)3O12 scintillation crystals;Functional materials;2015-12-15

3. Optical and Scintillation Properties of Bi4(GexS1-x)3O12Single Crystal;Acta Physica Polonica A;2015-03

4. Study on Scintillation Characteristics of BGSO Single Crystals;IEEE Transactions on Nuclear Science;2014-02

5. Scintillation properties of Bi4(Ge1−xSix)3O12 single crystals grown by Czochralski method;Journal of Crystal Growth;2013-03

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