Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Structural characterisation of Al grown on group III-nitride layers and sapphire by molecular beam epitaxy

Published:2002-01 Issue:2-3 Volume:234 Page:384-390
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Brown P.D.,Fay M.,Bock N.,Marlafeka S.,Cheng T.S.,Novikov S.V.,Davis C.S.,Campion R.P.,Foxon C.T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. A review of the metal–GaN contact technology

2. Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

3. GaN: Processing, defects, and devices

4. Epitaxial relationships between Al, Ag and GaAs{001} surfaces

5. Molecular beam epitaxial growth of single‐crystal Al films on GaAs (110)

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1. The fundamental surface science of wurtzite gallium nitride;Surface Science Reports;2017-09

2. Local heteroepitaxy as an adhesion mechanism in aluminium coatings cold gas sprayed on AlN substrates;Acta Materialia;2017-04

3. Correlation Between Optical, Morphological, and Compositional Properties of Aluminum Nitride Thin Films by Pulsed Laser Deposition;IEEE Sensors Journal;2016-01

4. Fabrication and characterization of aluminum nitride pedestal-type optical waveguide;Canadian Journal of Physics;2014-07

5. STRUCTURAL PROPERTIES OF AlN FILMS WITH OXYGEN CONTENT DEPOSITED BY REACTIVE MAGNETRON SPUTTERING: XRD AND XPS CHARACTERIZATION;Surface Review and Letters;2011-02

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